cmos linear image sensor s11108 achieves high sensitivity by adding an ampli er to each pixel www.hamamatsu.com 1 pixel size: 14 14 m position detection 2048 pixels image reading effective photosensitive area length: 28.672 mm encoder high sensitivity: 50 v/( lxs) barcode reader simultaneous charge integration for all pixels variable integration time function (electronic shutter function) 5 v single power supply operation built-in timing generator allows operation with only start and clock pulse inputs video data rate: 10 mhz max. small input terminal capacitance: 5 pf absolute maximum ratings structure parameter symbol condition value unit supply voltage vdd ta=25 c -0.3 to +6 v clock pulse voltage v(clk) ta=25 c -0.3 to +6 v start pulse voltage v(st) ta=25 c -0.3 to +6 v block switch voltage v(bsw) ta=25 c -0.3 to +6 v operating temperature * 1 topr -40 to +85 c storage temperature * 1 tstg -40 to +85 c * 1: no condensation note: ex ceeding the absolute maximum r atings even momentarily may cause a drop in product quality. always be sure to use the product within the absolute maximum ratings. parameter speci cation unit number of pixels 2048 - pixel size 14 14 m photosensitive area length 28.672 mm package lcp (liquid crystal polymer) - window material tempax - the s11108 is a cmos linear image sensor that achieves high sensitivity by adding an ampli er to each pixel. it has a long photosensitive area (effective photosensitive area length: 28.672 mm) consisting of 2048 pixels, each with a pixel size of 14 14 m. features applications
cmos linear image sensor s11108 2 recommended terminal voltage (ta=25 c) electrical characteristics [ta=25 c, vdd=5 v, v(clk)=v(st)=5 v] electrical and optical characteristics [ta=25 c, vdd=5 v, v(clk)=v(st)=5 v, f(clk)=10 mhz] parameter symbol min. typ. max. unit supply voltage vdd 4.75 5 5.25 v clock pulse voltage high level v(clk) 3 vdd vdd + 0.25 v low level 0 - 0.3 v start pulse voltage high level v(st) 3 vdd vdd + 0.25 v low level 0 - 0.3 v block switch voltage * 2 2048 pixels reading v(bsw) 0 - 0.3 v 1024 pixels reading 3 vdd vdd + 0.25 v * 2: this should be nc or gnd when reading from all pixels, or vdd when reading from 1024 pixels (513 to 1536 channels). parameter symbol min. typ. max. unit clock pulse frequency f(clk) 200 k - 10 m hz video data rate vr - f(clk) - hz output impedance zo 70 - 260 current consumption * 3 * 4 i2 03 05 0m a *3: f(clk)=10 mhz *4: current consumption increases as the clock pulse frequency increases. the current consumption is 10 ma t yp . at f(clk)=200 kh z. parameter symbol min. typ. max. unit spectral response range 400 to 1000 nm peak sensitivity wavelength p - 700 - nm photosensitivity * 5 r - 50 - v/(lx s) conv ersion ef ciency* 6 c e-1 3- v/e - dark output voltage * 7 vd 0 0.3 3 mv saturation output voltage * 8 vsat 0.8 1.2 1.8 v readout noise nr 0.3 0.6 1.5 mv rms dynamic range 1 * 9 dr1 - 2000 - times dynamic range 2 * 10 dr2 - 4000 - times output offset voltage vo 0.3 0.5 0.9 v photoresponse nonuniformity * 5 * 11 prnu - 2 10 % image lag il - - 0.6 mv *5: measured with a tungsten lamp of 2856 k *6 : output voltage generated per one electron * 7: integration time ts=10 ms * 8: difference from vo *9: dr1= vsat/nr *10: dr2= vsat/vd integr ation time t s=10 ms dark output voltage is proportional to the integration time and so the shorter the integration time, the wider the dynamic range. * 11: photoresponse nonuniformity (prnu) is the output nonuniformity that occurs when the entire photosensitive area is uniformly illuminated by light which is 50% of the satur ation exposure lev el. prnu is measured using 2042 pixels excluding 3 pixels each at both ends, and is de ned as follows: prnu= x / x 100 (%) x: average output of all pixels, x: difference between x and maximum output or minimum output * 12: signal components of the preceding line data that still remain even after the data is read out in a saturation output state input terminal capacitance (ta=25 c, vdd=5 v) parameter symbol min. typ. max. unit clock pulse input terminal capacitance c(clk) - 5 - pf start pulse input terminal capacitance c(st) - 5 - pf
cmos linear image sensor s11108 3 spectral response (typical example) block diagram kmpdb0308eb kmpdc0312ed 400 600 800 1000 1200 wavelength (nm) 0 20 40 60 80 100 relative sensitivity (%) (ta=25 c) amp array bias generator hold circuit photodiode array shift register timing generator trig video bsw eos clk st 23 3 24 22 13 15
cmos linear image sensor s11108 4 output waveform of one pixel gnd gnd 0.5 v (output offset voltage) 1.7 v (saturation output voltage=1.2 v) gnd 5 v/div. 5 v/div. 1 v/div. 20 ns/div. clk trig v ideo gnd gnd 0.5 v (output offset voltage) 1.7 v (saturation output voltage=1.2 v) gnd 5 v/div. 5 v/div. 1 v/div. 200 ns/div. clk trig v ideo the timing for acquiring the video signal is synchronized with the rising edge of a trigger pulse (see red arrow below.). f(clk)=vr=1 mhz f(clk)=vr=10 mhz
cmos linear image sensor s11108 5 timing chart parameter symbol min. typ. max. unit start pulse width interval * 13 tpi(st) 98/f(clk) - - s start pulse high period * 13 * 14 thp(st) 6/f(clk) - - s start pulse low period tlp(st) 92/f(clk) - - s start pulse rise and fall times tr(st), tf(st) 0 10 30 ns clock pulse duty - 45 50 55 % clock pulse rise and fall times tr(clk), tf(clk) 0 10 30 ns *13: dark output increases if the start pulse period or the start pulse high period is lengthened. * 14: the integration time equals the high period of st plus 48 clk cycles. the shift register starts oper ation at the rising edge of clk immediately after st goes low . the integration time can be changed by changing the ratio of the high and low periods of st. if the rst trig pulse after st goes low is counted as the rst pulse, the video signal is acquired at the rising edge of the 89th trig pulse. 1 1 89 2 34 2048 1 1 2 34 5 51 52 53 87 88 89 clk st video* trig eos thp(st) tlp(st) tpi(st) 87 clocks 2048 * when reading from 1024 pixels, the video signal is output from 513 to 1536 channels. block switch enabled period integration time clk st tf(clk) tf(st) tr(st) tr(clk) tlp(st) thp(st) tpi(st) 1/f(clk) kmpdc0319ef
cmos linear image sensor s11108 6 operation example thp(st)=204.8 s tlp(st)=9.2 s st tpi(st)=214 s kmpdc0366eb when the clock pulse frequency is maximized (video data rate is also maximized), the time of one scan is minimized, and the int egra- tion time is maximized (for outputting signals from all 2048 channels) clock pulse frequency = video data rate = 10 mhz start pulse cycle = 2140/f(clk) = 2140/10 mhz = 214 s high period of start pulse = start pulse cycle - start pulse?s low period min. = 2140/f(clk) - 92/f(clk) = 2140/10 mhz - 92/10 mhz = 204.8 s integration time is equal to the high period of start pulse + 48 cycles of clock pulses, so it will be 204.8 + 4.8 = 209.6 s. for outputting signals from all 2048 channels for outputting signals from 1024 channels (513 to 1536 channels) thp(st)=102.4 s tlp(st)=9.2 s st tpi(st)=111.6 s kmpdc0387ea when the clock pulse frequency is maximized (video data rate is also maximized), the time of one scan is minimized, and the int egra- tion time is maximized [for outputting signals from 1024 channels (513 to 1536 channels)] clock pulse frequency = video data rate = 10 mhz start pulse cycle = 1116/f(clk) = 1116/10 mhz = 111.6 s high period of start pulse = start pulse cycle - start pulse?s low period min. = 1116/f(clk) - 92/f(clk) = 1116/10 mhz - 92/10 mhz = 102.4 s integration time is equal to the high period of start pulse + 48 cycles of clock pulses, so it will be 102.4 + 4.8 = 107.2 s.
cmos linear image sensor s11108 7 pin no. symbol i/o description pin no. symbol i/o description 1 vdd i supply voltage 13 video o video signal 2 vss gnd 14 nc no connection 3 clk i clock pulse 15 eos o end of scan 4 nc no connection 16 nc no connection 5 nc no connection 17 nc no connection 6 nc no connection 18 nc no connection 7 nc no connection 19 nc no connection 8 nc no connection 20 nc no connection 9 nc no connection 21 nc no connection 10 nc no connection 22 bsw block switch * 15 11 vss gnd 23 trig o trigger pulse for video signal acquisition 12 vdd i supply voltage 24 st i start pulse note: leave the ?nc? terminals open and do not connect them to gnd. connect a buffer ampli er for impedance conversion to the video output terminal so as to minimize the current ow. as the buffer ampli er, use a high input impedance operational ampli er with jfet or cmos input. * 15: this should be nc or gnd when reading from all pixels, or vdd when reading from 1024 pixels (513 to 1536 channels). pin connections dimensional outline (unit: mm) kmpda0250ef photosensitive area 28.672 41.6 0.2 tolerance unless otherwise noted: 0.1 *1: distance from window upper surface to photosensitive surface *2: distance from package bottom to photosensitive surface *3: glass thickness 2.54 0.51 27.94 14.336 0.3 9.1 0.1 10.2 0.5 15 10.02 0.3 4.55 0.4 1.4 0.2 * 2 1.35 0.2 * 1 0.5 0.05* 3 1 ch 1 24 12 13 0.2 4.0 0.5 3.0 photosensitive area 0.014 direction of scan 15 photosensitive surface a a? a-a? cross section
cmos linear image sensor s11108 8 kmpdc0367eb application circuit example 1 2 3 4 5 6 7 8 9 10 11 12 24 23 22 21 20 19 18 17 16 15 14 13 st trig bsw nc nc nc nc nc nc eos nc video vdd vss clk nc nc nc nc nc nc nc vss vdd 22 f/25 v 0.1 f 0.1 f 0.1 f +5 v +5 v +5 v trig eos st clk 74hc541 74hc541 + 22 f/25 v 22 f/25 v + + 22 f/25 v 22 f/25 v 22 f/25 v video s11108 lt1818 22 pf -5 v 51 100 82 82 0.1 f 0.1 f 0.1 f +5 v +5 v + + + - +
cmos linear image sensor s11108 cat. no. kmpd1112e09 nov. 2013 dn www.hamamatsu.com hamamatsu photonics k.k., solid state division 1126-1 ichino-cho, higashi-ku, hamamatsu city, 435-8558 japan, telephone: (81) 53-434-3311, fax: (81) 53-434-5184 u.s.a.: hamamatsu corporation: 360 foothill road, p.o.box 6910, bridgewater, n.j. 08807-0910, u.s.a., telephone: (1) 908-231-0960, fax: (1) 908-231-1218 germany: hamamatsu photonics deutschland gmbh: arzbergerstr. 10, d-82211 herrsching am ammersee, germany, telephone: (49) 8152-375-0, fax: (49) 8152-265-8 france: hamamatsu photonics france s.a.r.l.: 19, rue du saule trapu, parc du moulin de massy, 91882 massy cedex, france, telephone: 33-(1) 69 53 71 00, fax: 33-(1) 69 53 71 10 united kingdom: hamamatsu photonics uk limited: 2 howard court, 10 tewin road, welwyn garden city, hertfordshire al7 1bw, united kingdom, telephone: (44) 1707-294888, fax: (44) 1707-325777 north europe: hamamatsu photonics norden ab: thorshamnsgatan 35 16440 kista, sweden, telephone: (46) 8-509-031-00, fax: (46) 8- 509-031-01 italy: hamamatsu photonics italia s.r.l.: strada della moia, 1 int. 6, 20020 arese, (milano), italy, telephone: (39) 02-935-81-733, fax: (39) 02-935-81-741 china: hamamatsu photonics (china) co., ltd.: 1201 tower b, jiaming center, no.27 dongsanhuan beilu, chaoyang district, beijing 100020, china, telephone: (86) 10-6586-6006, fax: (86) 10-6586-2866 product specifications are subject to change without prior notice due to improvements or other reasons. this document has been carefully prepared and the information contained is believed to be accurate. in rare cases, however, there may be inaccuracies such as text errors. before using these products, always contact us for the delivery specification sheet to check the latest specifications. type numbers of products listed in the delivery specification sheets or supplied as samples may have a suffix "(x)" which means preliminary specifications or a suffix "(z)" which means developmental specifications. the product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that one year period. however, even if within the warranty period we accept absolutely no liability for any loss caused by natural d isasters or improper product use. copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission. information described in this material is current as of november, 2013. 9 precautions (1) electrostatic countermeasures this device has a built-in protection circuit against static electrical char ges. however, to prevent destroying the device with electro- static charges, take countermeasures such as grounding yourself, the workbench and tools to prevent static discharges. also pro tect this device from surge voltages which might be caused by peripheral equipment. (2) light input window if dust or dirt gets on the light input window, it will show up as black blemishes on the image. when cleaning, avoid rubbing t he window surface with dry cloth or dry cotton swab, since doing so may generate static electricity. use soft cloth, paper or a co tton swab moistened with alcohol to wipe dust and dirt off the window surface. then blow compressed air onto the window surface so that no spot or stain remains. (3) soldering to prevent damaging the device during soldering, take precautions to prevent excessive soldering temperatures and times. solder - ing should be performed within 5 seconds at a soldering temperature below 260 c. (4) operating and storage environments hanble the device within the temperature range speci ed in the absolute maximum ratings. operating or storing the device at an excessively high temperature and humidity may cause variations in performance characteris - tics and must be avoided. (5) uv exposure this product is not designed to prevent deterioration of characteristics caused by uv exposure, so do not expose it to uv light. related information ? notice ? image sensors/precautions precautions www.hamamatsu.com/sp/ssd/doc_en.html
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